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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2522AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER HAN INC Collector-emitter voltage Collector current (DC) Collector current-peak Base current-peak Total power dissipation Collector-base voltage SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 1500 800 10 25 6 9 UNIT V V A A A A W ae ae Base Collector current (DC) TC=25ae 45 150 -65~150 Max.operating junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2522AF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=6.0A ;IB=1.2A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=6.0A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125ae VEB=7.5V; IC=0 1.3 0.25 2.0 0.25 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 CC DC current gain Collector capacitance ANG CH IC=1A ; VCE=5V 10 IC=6A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 5 IN EMIC ES OND TOR UC 7 8 115 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2522AF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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